Comparison of ZnO-based JFET, MESFET, and MISFET

IEEE Transactions on Electron Devices

Volumn 60, Issue 6, 2013, Pages 1828-1833

  Klupfel, Fabian Johannes ^a   Schein, Friedrich Leonhard ^a   Lorenz, Michael ^a   Frenzel, Heiko ^a   Von Wenckstern, Holger ^a   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Junction field effect transistors (JFETs); metal insulator semiconductor field effect transistors (MISFETs); metal semiconductor field effect transistors (MESFETs); zinc oxide (ZnO)

Indexed keywords

DC CHARACTERISTICS; DEVICE CHARACTERISTICS; FREQUENCY DEPENDENCE; JUNCTION FIELD-EFFECT TRANSISTORS (JFETS); METAL SEMICONDUCTORS; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; ROOM TEMPERATURE; ZINC OXIDE (ZNO);

MESFET DEVICES; MISFET DEVICES; SEMICONDUCTOR JUNCTIONS;

ZINC OXIDE;

EID: 84878161109     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2257173     Document Type: Article

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