All-Oxide Inverters Based on ZnO Channel JFETs with Amorphous ZnCo2O4 Gates

IEEE Transactions on Electron Devices

Volumn 62, Issue 12, 2015, Pages 4004-4008

  Klupfel, Fabian Johannes ^a   Holtz, Agnes ^a   Schein, Friedrich Leonhard ^a   Von Wenckstern, Holger ^a   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Inverter; junction FET (JFET); oxide electronics; zinc cobaltite (ZnCoO); zinc oxide (ZnO).

Indexed keywords

ELECTRON DEVICES;

GATE CONTACT; HIGH GAIN; INTEGRATED INVERTER; LEVEL SHIFTER; OPERATING VOLTAGE; SATURATION CURRENT; ZNO;

ZINC OXIDE;

EID: 84959455752     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2015.2493361     Document Type: Article

References (36)

1. J. F. Wager, D. A. Keszler, and R. E. Presley, Transparent Electronics. New York, NY, USA: Springer-Verlag, 2008.
2. T. R. Paudel, A. Zakutayev, S. Lany, M. dAvezac, and A. Zunger, "Doping rules and doping prototypes in A2BO4 spinel oxides, " Adv. Funct. Mater., vol. 21, no. 23, pp. 4493-4501, 2011.
3. M. N. Amini, H. Dixit, R. Saniz, D. Lamoen, and B. Partoens, "The origin of p-Type conductivity in ZnM2O4 (M = Co, Rh, Ir) spinels, " Phys. Chem. Chem. Phys., vol. 16, no. 6, pp. 2588-2596, 2014.
4. S. Kim, J. A. Cianfrone, P. Sadik, K.-W. Kim, M. Ivill, and D. P. Norton, "Room temperature deposited oxide p-n junction using p-Type zinc-cobalt-oxide, " J. Appl. Phys., vol. 107, no. 10, p. 103538, 2010.
5. F.-L. Schein, M. Winter, T. Böntgen, H. von Wenckstern, and M. Grundmann, "Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes, " Appl. Phys. Lett., vol. 104, no. 2, p. 022104, 2014.
6. S. Narushima et al., "A p-Type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes, " Adv. Mater., vol. 15, no. 17, pp. 1409-1413, 2003.
7. F. Schein, H. von Wenckstern, H. Frenzel, and M. Grundmann, "ZnObased n-channel junction field-effect transistor with room-Temperaturefabricated amorphous p-Type ZnCo2O4 gate, " IEEE Electron Device Lett., vol. 33, no. 5, pp. 676-678, May 2012.
8. F. J. Klöpfel, F.-L. Schein, M. Lorenz, H. Frenzel, H. von Wenckstern, and M. Grundmann, "Comparison of ZnO-based JFET, MESFET, and MISFET, " IEEE Trans. Electron Devices, vol. 60, no. 6, pp. 1828-1833, Jun. 2013.
9. Y. Ogo et al., "Tin monoxide as an s-orbital-based p-Type oxide semiconductor: Electronic structures and TFT application, " Phys. Status Solidi A, vol. 206, no. 9, pp. 2187-2191, Sep. 2009.
10. E. Fortunato et al., "Transparent p-Type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing, " Appl. Phys. Lett., vol. 97, no. 5, p. 052105, 2010.
11. H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, and M. Grundmann, "High-gain integrated inverters based on ZnO metal-semiconductor fieldeffect transistor technology, " Appl. Phys. Lett., vol. 96, no. 11, p. 113502, 2010.
12. H. Frenzel et al., "Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits, " Adv. Mater., vol. 22, no. 47, pp. 5332-5349, Dec. 2010.
13. M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, and H. von Wenckstern, "Transparent semiconducting oxides: Materials and devices, " Phys. Status Solidi A, vol. 207, no. 6, pp. 1437-1449, May 2010.
14. W. Shockley, "A unipolar field-effect transistor, " Proc. IRE, vol. 40, no. 11, pp. 1365-1376, Nov. 1952.
15. M. Grundmann, The Physics of Semiconductors: An Introduction Including Devices and Nanophysics. Berlin, Germany: Springer-Verlag, 2006.
16. A. S. Sedra and K. C. Smith, Microelectronic Circuits, 5th ed. London, U.K.: Oxford Univ. Press, 2004.
17. R. E. Presley, D. Hong, H. Q. Chiang, C. M. Hung, R. L. Hoffman, and J. F. Wager, "Transparent ring oscillator based on indium gallium oxide thin-film transistors, " Solid-State Electron., vol. 50, no. 3, pp. 500-503, Mar. 2006.
18. M. Ofuji et al., "Fast thin-film transistor circuits based on amorphous oxide semiconductor, " IEEE Electron Device Lett., vol. 28, no. 4, pp. 273-275, Apr. 2007.
19. S. H. Cha, M. S. Oh, K. H. Lee, S. Im, B. H. Lee, and M. M. Sung, "Electrically stable low voltage ZnO transistors with organic/inorganic nanohybrid dielectrics, " Appl. Phys. Lett., vol. 92, no. 2, p. 023506, 2008.
20. Dhananjay et al., "Complementary inverter circuits based on p-SnO2 and n-In2O3 thin film transistors, " Appl. Phys. Lett., vol. 92, no. 23, p. 232103, 2008.
21. C.-W. Ou et al., "Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits, " Appl. Phys. Lett., vol. 92, no. 12, p. 122113, 2008.
22. J. Sun et al., "ZnO thin-film transistor ring oscillators with 31-ns propagation delay, " IEEE Electron Device Lett., vol. 29, no. 7, pp. 721-723, Jul. 2008.
23. D. P. Heineck, B. R. McFarlane, and J. F. Wager, "Zinc tin oxide thinfilm-Transistor enhancement/depletion inverter, " IEEE Electron Device Lett., vol. 30, no. 5, pp. 514-516, May 2009.
24. W.-C. Shin, K. Remashan, J.-H. Jang, M.-S. Oh, and S.-J. Park, "Ring oscillator circuit based on ZnO thin-film transistors fabricated by RF magnetron sputtering, " J. Korean Phys. Soc., vol. 55, no. 4, pp. 1514-1518, Oct. 2009.
25. M. S. Oh, J. I. Han, K. Lee, B. H. Lee, M. M. Sung, and S. Im, "Coupling top-And bottom-gate ZnO thin film transistors for low voltage, high gain inverter, " Electrochem. Solid-State Lett., vol. 13, no. 6, pp. H194-H196, 2010.
26. A. Dindar, J. B. Kim, C. Fuentes-Hernandez, and B. Kippelen, "Metaloxide complementary inverters with a vertical geometry fabricated on flexible substrates, " Appl. Phys. Lett., vol. 99, no. 17, p. 172104, 2011.
27. R. Martins et al., "Complementary metal oxide semiconductor technology with and on paper, " Adv. Mater., vol. 23, no. 39, pp. 4491-4496, 2011.
28. K. Nomura, T. Kamiya, and H. Hosono, "Ambipolar oxide thin-film transistor, " Adv. Mater., vol. 23, no. 30, pp. 3431-3434, 2011.
29. P. C. Debnath and S. Y. Lee, "Full swing logic inverter with amorphous SiInZnO and GaInZnO thin film transistors, " Appl. Phys. Lett., vol. 101, no. 9, p. 092103, 2012.
30. E. Fortunato, P. Barquinha, and R. Martins, "Oxide semiconductor thinfilm transistors: A review of recent advances, " Adv. Mater., vol. 24, no. 22, pp. 2945-2986, 2012.
31. L. Y. Liang et al., "Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities, " Appl. Phys. Lett., vol. 100, no. 26, p. 263502, 2012.
32. K. Hong, S. H. Kim, K. H. Lee, and C. D. Frisbie, "Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic, " Adv. Mater., vol. 25, no. 25, pp. 3413-3418, 2013.
33. Y. V. Li, J. I. Ramirez, K. G. Sun, and T. N. Jackson, "Low-voltage double-gate ZnO thin-film transistor circuits, " IEEE Electron Device Lett., vol. 34, no. 7, pp. 891-893, Jul. 2013.
34. R. F. P. Martins et al., "Recyclable, flexible, low-power oxide electronics, " Adv. Funct. Mater., vol. 23, no. 17, pp. 2153-2161, 2013.
35. I.-C. Chiu, Y.-S. Li, M.-S. Tu, and I.-C. Cheng, "Complementary oxide-semiconductor-based circuits with n-channel ZnO and p-channel SnO thin-film transistors, " IEEE Electron Device Lett., vol. 35, no. 12, pp. 1263-1265, Dec. 2014.
36. P. K. Nayak, J. A. Caraveo-Frescas, Z. Wang, M. N. Hedhili, Q. X. Wang, and H. N. Alshareef, "Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer, " Sci. Rep., vol. 4, Apr. 2014, Art. ID 4672.