Improvement of electric properties in transparent p-Li 0.07Ni0.93O(111)/n-ZnO(112̂0) heterojunction with Mg1-xZnxO intermediate layer

Materials Letters

Volumn 114, Issue , 2014, Pages 76-79

  Zhou, Tingting ^a   Lu, Bin ^a   Ye, Yinghui ^a   Pan, Xinhua ^a   Lu, Jianguo ^a   Ye, Zhizhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Buffer layer; Heterojunction; Multilayer structure; Physical vapor deposition; Semiconductors

Indexed keywords

CRYSTALLINITIES; DETECTING DEVICES; INTERMEDIATE LAYERS; MULTILAYER STRUCTURES; NON-POLAR ZNO; RECTIFYING PROPERTIES; SAPPHIRE SUBSTRATES; ULTRAVIOLET LIGHT-EMITTING;

BUFFER LAYERS; DEPOSITION; ELECTRIC PROPERTIES; LITHIUM; NICKEL; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTOR MATERIALS; ZINC; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84886465759     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2013.09.112     Document Type: Article

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