Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition

ACS Combinatorial Science

Volumn 18, Issue 4, 2016, Pages 188-194

  Bitter, Sofie ^a   Schlupp, Peter ^a   Bonholzer, Michael ^a   Von Wenckstern, Holger ^a   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

amorphous oxide semiconductors; continuous composition spread; electrical properties; pulsed laser deposition; zinc tin oxide

Indexed keywords

CATION; OXIDE; TIN; ZINC;

CHEMISTRY; COMBINATORIAL CHEMISTRY; ELECTRIC CONDUCTIVITY; LASER; LIGHT RELATED PHENOMENA; TEMPERATURE;

CATIONS; COMBINATORIAL CHEMISTRY TECHNIQUES; ELECTRIC CONDUCTIVITY; LASERS; OPTICAL PHENOMENA; OXIDES; TEMPERATURE; TIN; ZINC;

EID: 84964426522     PISSN: 21568952     EISSN: 21568944     Source Type: Journal    
DOI: 10.1021/acscombsci.5b00179     Document Type: Article

References (33)

1. Fukumura, T.; Ohtani, M.; Kawasaki, M.; Okimoto, Y.; Kageyama, T.; Koida, T.; Hasegawa, T.; Tokura, Y.; Koinuma, H. Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach Appl. Phys. Lett. 2000, 77, 3426-3428 10.1063/1.1326847
2. Lorenz, M.; Hochmuth, H.; Natusch, D.; Börner, H.; Lippold, G.; Kreher, K.; Schmitz, W. Large-area double-side pulsed laser deposition of YBa2Cu 3O7-x thin films on 3-in. sapphire wafers Appl. Phys. Lett. 1996, 68, 3332-3334 10.1063/1.116048
3. Christen, H. M.; Rouleau, C. M.; Ohkubo, I.; Zhai, H. Y.; Lee, H. N.; Sathyamurthy, S.; Lowndes, D. H. An improved continuous compositional-spread technique based on pulsed-laser deposition and applicable to large substrate areas Rev. Sci. Instrum. 2003, 74, 4058-4062 10.1063/1.1602962
4. Rühle, S.; Anderson, A. Y.; Barad, H. N.; Kupfer, B.; Bouhadana, Y.; Rosh-Hodesh, E.; Zaban, A. All-oxide photovoltaics J. Phys. Chem. Lett. 2012, 3, 3755-3764 10.1021/jz3017039
5. Keller, D.; Ginsburg, A.; Barad, H.-N.; Shimanovich, K.; Bouhadana, Y.; Rosh-Hodesh, E.; Takeuchi, I.; Aviv, H.; Tischler, Y. R.; Anderson, A. Y.; Zaban, A. Utilizing Pulsed Laser Deposition Lateral Inhomogeneity as a Tool in Combinatorial Material Science ACS Comb. Sci. 2015, 17, 209-216 10.1021/co500094h
6. von Wenckstern, H.; Zhang, Z.; Schmidt, F.; Lenzner, J.; Hochmuth, H.; Grundmann, M. Continuous composition spread using pulsed-laser deposition with a single segmented target CrystEngComm 2013, 15, 10020-10027 10.1039/c3ce41327f
7. Hanak, J. J. The "multiple-sample concept" in materials research: Synthesis, compositional analysis and testing of entire multicomponent systems J. Mater. Sci. 1970, 5, 964-971 10.1007/BF00558177
8. Zhang, Z.; Von Wenckstern, H.; Grundmann, M. Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O Appl. Phys. Lett. 2013, 103, 171111 10.1063/1.4826596
9. 3 for x < 0.4 J. Appl. Phys. 2014, 116, 013505 10.1063/1.4886895
10. 3 thin film with continuous composition spread J. Appl. Phys. 2015, 117, 165307 10.1063/1.4919088
11. 3 thin films and characteristics of Schottky contacts thereon Semicond. Sci. Technol. 2015, 30, 024005 10.1088/0268-1242/30/2/024005
12. Görrn, P.; Sander, M.; Meyer, J.; Kroger, M.; Becker, E.; Johannes, H. H.; Kowalsky, W.; Riedl, T. Towards see-through displays: Fully transparent thin-film transistors driving transparent organic light-emitting diodes Adv. Mater. 2006, 18, 738-741 10.1002/adma.200501957
13. Minami, T. Properties of transparent zinc-stannate conducting films prepared by radio frequency magnetron sputtering J. Vac. Sci. Technol., A 1995, 13, 1095-1099 10.1116/1.579592
14. Minami, T.; Nanto, H.; Shooji, S.; Takata, S. The stability of zinc oxide transparent electrodes fabricated by R.F. magnetron sputtering Thin Solid Films 1984, 111, 167-174 10.1016/0040-6090(84)90484-X
15. 2 thin films prepared by RF magnetron sputtering on low-temperature substrates Jpn. J. Appl. Phys. 1988, 27, 287-289 10.1143/JJAP.27.L287
16. Major, S.; Kumar, S.; Bhatnagar, M.; Chopra, K. L. Effect of hydrogen plasma treatment on transparent conducting oxides Appl. Phys. Lett. 1986, 49, 394-396 10.1063/1.97598
17. Thomas, J. H. Auger electron and x-ray photoelectron spectroscopy analysis of the hydrogenated amorphous silicon-tin oxide interface: Evidence of a plasma-induced reaction Appl. Phys. Lett. 1983, 43, 101-102 10.1063/1.94143
18. Hosono, H.; Kikuchi, N.; Ueda, N.; Kawazoe, H. Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples J. Non-Cryst. Solids 1996, 198-200, 165-169 10.1016/0022-3093(96)80019-6
19. Hosono, H.; Yasukawa, M.; Kawazoe, H. Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides J. Non-Cryst. Solids 1996, 203, 334-344 10.1016/0022-3093(96)00367-5
20. Jayaraj, M. K.; Saji, K. J.; Nomura, K.; Kamiya, T.; Hosono, H. Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application J. Vac. Sci. Technol. B 2008, 26, 495-501 10.1116/1.2839860
21. Schlupp, P.; von Wenckstern, H.; Grundmann, M. Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature MRS Online Proc. Libr. 2014, 1633, 101-104 10.1557/opl.2014.117
22. Schlupp, P.; Schein, F.-L.; von Wenckstern, H.; Grundmann, M. All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals Adv. Electron. Mater. 2015, 1, 1400023 10.1002/aelm.201400023
23. Ko, J.; Kim, I. H.; Kim, D.; Lee, K. S.; Lee, T. S.; Cheong, B.; Kim, W. M. Transparent and conducting Zn-Sn-O thin films prepared by combinatorial approach Appl. Surf. Sci. 2007, 253, 7398-7403 10.1016/j.apsusc.2007.03.036
24. Kim, Y. J.; Oh, S.; Yang, B. S.; Han, S. J.; Lee, H. W.; Kim, H. J.; Jeong, J. K.; Hwang, C. S.; Kim, H. J. Impact of the Cation Composition on the Electrical Performance of Solution-Processed Zinc Tin Oxide Thin-Film Transistors ACS Appl. Mater. Interfaces 2014, 6, 14026-14036 10.1021/am503351e
25. Kim, Y. H.; Han, J. I.; Park, S. K. Effect of Zinc/Tin composition ratio on the operational stability of solution-processed Zinc-Tin-Oxide Thin-Film transistors IEEE Electron Device Lett. 2012, 33, 50-52 10.1109/LED.2011.2171913
26. Hu, W.; Peterson, R. L. Charge transport in solution-processed zinc tin oxide thin film transistors J. Mater. Res. 2012, 27, 2286-2292 10.1557/jmr.2012.134
27. van der Pauw, L. J. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape Philips Res. Reports 1958, 13, 1-9
28. van der Pauw, L. J. A method of measuring the resistivity and Hall coefficient on lamellae of arbitrary shape Philips Technol. Rev. 1958, 20, 220-224
29. von Wenckstern, H.; Brandt, M.; Zimmermann, G.; Lenzner, J.; Lorenz, M.; Grundmann, M. Temperature dependent Hall measurements on PLD thin films MRS Online Proc. Libr. 2007, 957, 1-6 10.1557/PROC-0957-K03-02
30. Tauc, J.; Grigorovici, R.; Vancu, A. Optical Properties and Electronic Structure of Amorphous Germanium Phys. Status Solidi B 1966, 15, 627-637 10.1002/pssb.19660150224
31. Riedl, T.; Görrn, P.; Kowalsky, W. Transparent Electronics for See-Through AMOLED Displays J. Disp. Technol. 2009, 5, 501-508 10.1109/JDT.2009.2023093
32. Frenzel, H.; Dörfler, T.; Schlupp, P.; von Wenckstern, H.; Grundmann, M. Long-throw magnetron sputtering of amorphous Zn-Sn-O thin films at room temperature Phys. Status Solidi A 2015, 212, 1482-1486 10.1002/pssa.201431918
33. Seo, S.-J.; Choi, C. G.; Hwang, Y. H.; Bae, B.-S. High performance solution-processed amorphous zinc tin oxide thin film transistor J. Phys. D: Appl. Phys. 2009, 42, 035106 10.1088/0022-3727/42/3/035106