Complementary oxide-semiconductor-based circuits with n-channel ZnO and p-Channel SnO thin-film transistors

IEEE Electron Device Letters

Volumn 35, Issue 12, 2014, Pages 1263-1265

  Chiu, I Chung ^a   Li, Yun Shiuan ^a   Tu, Min Sheng ^a   Cheng, I Chun ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Complementary thin film transistor; inverter; ring oscillator; tin monoxide (SnO); zinc oxide (ZnO)

Indexed keywords

AMPLIFICATION; ASPECT RATIO; FIELD EFFECT TRANSISTORS; MOS DEVICES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; TIN; TIN OXIDES; TRANSISTORS; ZINC; ZINC OXIDE;

INVERTER; RING OSCILLATOR; THIN-FILM TRANSISTOR (TFTS); TIN MONOXIDES; ZINC OXIDE (ZNO);

THIN FILM TRANSISTORS;

EID: 84913584327     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2364578     Document Type: Article

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