ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy

Applied Physics Express

Volumn 3, Issue 3, 2010, Pages

  Yang, Zheng ^a   Chu, Sheng ^a   Chen, Winnie V ^b   Li, Lin ^a   Kong, Jieying ^a   Ren, Jingjian ^a   Yu, Paul K L ^b   Liu, Jianlin ^a  

^a University of California Riverside   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED CURRENT; C-PLANE SAPPHIRE; C-PLANE SAPPHIRE SUBSTRATES; ELECTROLUMINESCENCE SPECTRA; GA-DOPED ZNO; LIFT-OFF PROCESS; OUTPUT POWER; P-TYPE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROCKING CURVES; SAPPHIRE SUBSTRATES; SB-DOPED; SILICON SUBSTRATES; STANDARD PHOTOLITHOGRAPHY; ULTRAVIOLET EMISSION; ZNO; ZNO FILMS;

CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; DISTILLATION; GALLIUM; GALLIUM ALLOYS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OHMIC CONTACTS; PHYSICAL OPTICS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; WATER ANALYSIS; X RAY DIFFRACTION;

ZINC OXIDE;

EID: 77949865764     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.032101     Document Type: Article

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