Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

Semiconductor Science and Technology

Volumn 30, Issue 2, 2015, Pages

  Wenckstern, H Von ^a   Splith, D ^a   Purfurst M ^a   Zhang, Z ^a   Kranert, Ch ^a   Muller S ^a   Lorenz, M ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

(In.Ga)2O3; continuous composition spread; gallium oxide; indium oxide; photo detector; pulsed laser deposition; Schottky diode

Indexed keywords

CRYSTAL STRUCTURE; ENERGY GAP; FILM GROWTH; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM ALLOYS; INDIUM COMPOUNDS; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; THIN FILMS;

(IN.GA)2O3; CONTINUOUS COMPOSITION SPREADS; GALLIUM OXIDES; INDIUM OXIDE; SCHOTTKY DIODES;

OPTICAL PROPERTIES;

EID: 84921505948     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/30/2/024005     Document Type: Review

References (35)

1. Víllora E G, Shimamura K, Yoshikawa Y, Aoki K and Ichinose N 2004 J. Cryst. Growth 270 420
2. Galazka Z, Uecker R, Irmscher K, Albrecht M, Klimm D, Pietsch M, Brützam M, Bertram R, Ganschow S and Fornari R 2010 Cryst. Res. Technol. 45 1229
3. Galazka Z, Uecker R, Irmscher K, Schulz D, Klimm D, Albrecht M, Pietsch M, Ganschow S, Kwasniewski A and Fornari R 2013 J. Cryst. Growth 362 349
4. Köstlin H, Jost R and Lems W 1975 Phys. Status Solidi a 29 87
5. Tahar R B H, Ban T, Ohya Y and Takahashi Y 1998 J. Appl. Phys. 83 2631
6. Gassenbauer Y, Schafranek R, Klein A, Zafeiratos S, Hävecker M, Knop-Gericke A and Schlögl R 2006 Phys. Rev. B 73 245312
7. King P, Veal T, Payne D, Bourlange A, Egdell R and McConville C 2008 Phys. Rev. Lett 101 116808
8. Bierwagen O, Speck J S, Nagata T and Chikyow T 2011 Appl. Phys. Lett. 98 172101
9. Walsh A 2011 Appl. Phys. Lett. 98 261910
10. Lany S, Zakutayev A, Mason T O, Wager J F, Poeppelmeier K R, Perkins J D, Berry J J, Ginley D S and Zunger A 2012 Phys. Rev. Lett. 108 16802
11. Scherer V, Janowitz C, Krapf A, Dwelk H, Braun D and Manzke R 2012 Appl. Phys. Lett. 100 212108
12. von Wenckstern H, Splith D, Schmidt F, Grundmann M, Bierwagen O and Speck J S 2014 APL Mater. 2 046104
13. Ueda N, Hosono H, Waseda R and Kawazoe H 1997 Appl. Phys. Lett. 71 933
14. Víllora E G, Atou T, Sekiguchi T, Sugawara T, Kikuchi M and Fukuda T 2001 Solid State Commun. 120 455-8
15. Orita M, Hiramatsu H, Ohta H, Hirano M and Hosono H 2002 Thin Solid Films 411 134-9
16. Víllora E G, Shimamura K, Yoshikawa Y, Ujiie T and Aoki K 2008 Appl. Phys. Lett. 92 202120
17. Irmscher K, Galazka Z, Pietsch M, Uecker R and Fornari R 2011 J. Appl. Phys. 110 063720
18. Sasaki K, Kuramata A, Masui T, Víllora E G, Shimamura K and Yamakoshi S 2012 Appl. Phys. Express 5 035502
19. Müller S, von Wenckstern H, Splith D, Schmidt F and Grundmann M 2014 Phys. Status Solidi a 211 34
20. Splith D, Müller S, Schmidt F, von Wenckstern H, van Rensburg J J, Meyer W E and Grundmann M 2014 Phys. Status Solidi a 211 40
21. Shannon R D 1968 J. Inorg. Nucl. Chem. 30 1-10
22. Patzke G and Binnewies M 2000 Solid State Sci. 2 689-99
23. Oshima T and Fujita S 2008 Phys. Status Solidi c 5 3113
24. Yang F, Ma J, Luan C and Kong L 2009 Appl. Surf. Sci. 255 4401
25. Kokubun Y, Abe T and Nakagomi S 2010 Phys. Status Solidi a 207 1741-5
26. Kong L, Ma J, Yang F, Luan C and Zhu Z 2010 J. Alloys Compd. 499 75-79
27. Kranert C, Lenzner J, Jenderka M, Lorenz M, von Wenckstern H, Schmidt-Grund R and Grundmann M 2014 J. Appl. Phys. 116 013505
28. Schmidt-Grund R, Kranert C, Böntgen T, Wenckstern H von, Krauß H and Grundmann M 2014 J. Appl. Phys. 116 053510
29. von Wenckstern H, Zhang Z, Schmidt F, Lenzner J, Hochmuth H and Grundmann M 2013 CrystEngComm 15 10020
30. Higashiwaki M, Sasaki K, Kuramata A, Masui T and Yamakoshi S 2012 Appl. Phys. Lett. 100 013504
31. Mohamed M, Irmscher K, Janowitz C, Galazka Z, Manzke R and Fornari R 2012 Appl. Phys. Lett. 101 132106
32. Katz O, Bahir G and Salzman J 2004 Appl. Phys. Lett. 84 4092-4
33. Zhang Z, von Wenckstern H, Schmidt M and Grundmann M 2011 Appl. Phys. Lett. 99 083502
34. Zhang Z, von Wenckstern H and Grundmann M 2013 Appl. Phys. Lett. 103 171111
35. Zhang Z, von Wenckstern H and Grundmann M 2014 IEEE J. Sel. Top. Quantum Electron. 20 1-6