Homo-junction pn diode using p-type SnO and n-type SnO2 thin films

ECS Solid State Letters

Volumn 3, Issue 8, 2014, Pages

  Um, Joseph ^a   Kim, Sarah Eunkyung ^a  

^a Seoul National University of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RECTIFIERS; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; OXIDE FILMS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TIN; TIN OXIDES;

DEVICE APPLICATION; HOMO-JUNCTIONS; OPTICAL TRANSPARENCY; REACTIVE RF MAGNETRON SPUTTERING; RECTIFICATION BEHAVIOR; SEMICONDUCTOR PROPERTIES; TIN OXIDE THIN FILM; TURN-ON VOLTAGES;

THIN FILMS;

EID: 84906703874     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.0051408ssl     Document Type: Article

References (39)

1. T. Kamiya, H. Hiramatsu, K. Nomura, and H. Hosono, J. Electroceramics, 17, 267 (2006).
2. A. N. Banerjee and K. K. Chattopadhyay, Prog. Cryst. Growth Charact. Mater., 50, 52 (2005).
3. D. Ginley, H. Hosono,D. Paine, and D. Editors, Handbook of TransparentConductors (Springer, New York, 2010).
4. G. Hautier, A. Miglio, G. Ceder, G. Rignanese, and X. Gonze, Nat. Commun., 4, 2292 (2013).
5. D. O. Scanlon and G. W. Watson, J. Mater. Chem., 22, 25236 (2012).
6. C. Lee, B. Nam, W. Choi, J. Lee, D. Choi, and Y. Oh, Mater. Lett., 65, 722 (2011).
7. M. Bagheri-Mohagheghi, N. Shahtahmasebi, M. R. Alinejad, A. Youssefi, and M. Shokooh-Saremi, Solid State Sci., 11, 233 (2009).
8. M. Bagheri-Mohagheghi and M. Shokooh-Saremi, Physica B, 405, 4205 (2010).
9. S. S. Pan, G. H. Li, L. B.Wang, Y. D. Shen, Y.Wang, T. Mei, and X. Hu, Appl. Phys. Lett., 95, 222112-1 (2009).
10. S. Yu,W. Zhang, L. Li, D. Xu, H. Dong, and Y. Jin, Appl. Surf. Sci., 286, 417 (2013).
11. Y. Huang, Z. Ji, and C. Chen, Appl. Surf. Sci., 253, 4819 (2007).
12. T. Yang, X. Qin, H. Wang, Q. Jia, R. Yu, B. Wang, J. Wang, K. Ibrahim, X. Jiang, and Q. He, Thin Solid Films, 518, 5542 (2010).
13. Z. Ji, Z. He, Y. Song, K. Liu, and Z. Ye, J. Cryst. Growth, 259, 282 (2003).
14. Z. Ji, L. Zhao, Z. He, Q. Zhou, and C. Chen, Mater. Lett., 60, 1387 (2006).
15. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya,M. Hirano, and H. Hosono, Appl. Phys. Lett., 93, 032113-1 (2008).
16. H. Yabuta, N. Kaji, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett., 97, 072111-1 (2010).
17. L. Liang and H. Cao, ECS Trans., 50(8), 289 (2012).
18. C. Ou, C. Dhananjay, Z. Ho, Y. Chuang, S. Cheng, M.Wu, K. Ho, and C. Chu, Appl. Phys. Lett., 92, 122113-1 (2008).
19. Dhananjay, C. Chu, C. Ou, M. Wu, Z. Ho, K. Ho, and S. Lee, Appl. Phys. Lett., 92, 232103-1 (2008).
20. W. Guo, L. Fu, Y. Zhang, K. Zhang, L. Y. Liang, Z. M. Liu, H. T. Cao, and X. Q. Pan, Appl. Phys. Lett., 96, 042113-1 (2010).
21. L. Y. Liang, Z. M. Liu, H. T. Cao, Z. Yu, Y. Y. Shi, A. H. Chen, H. Z. Zhang, Y. Q. Fang, and X. L. Sun, J. Electrochem. Soc., 157(6), H598 (2010).
22. L. Y. Liang, Z. M. Liu, H. T. Cao, Y. Y. Shi, X. L. Sun, Z. Yu, A. H. Chen, H. Z. Zhang, and Y. Q. Fang, ACS Appl. Mater. Interf., 2(6), 1565 (2010).
23. J. H. Shin, J. Y. Song, Y. H. Kim, and H. M. Park, Mater. Lett., 64, 1120 (2010).
24. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Kimura, M. Hirano, and H. Hosono, Phys.7 Status Solidi A, 206(9), 2187 (2009).
25. H. Hosono, Y. Ogo, H. Yanagi, and T. Kamiya, ECS Solid State Lett., 14(1), H13 (2011).
26. K. Nomura, T. Kamiya, and H. Hosono, Adv. Mater., 23, 3431 (2011).
27. Y. Q. Guo, R. Q. Tan, X. Li, J. H. Zhao, Z. L. Luo, C. Gao, and W. J. Song, Cryst. Eng. Commun., 13, 5677 (2011).
28. K. Okamura, B. Nasr, R. A. Brand, and H. Hahn, J. Mater. Chem., 22, 4607 (2012).
29. H. Wang, Y. Wang, J. Xu, H. Yang, C. Lee, and A. L. Rogach, Langmuir, 28, 10597 (2012).
30. Y. Kim, J. Um, S. Kim, and S. E. Kim, ECS Solid State Lett. 1(2), 29 (2012).
31. K. C. Sanal and M. K. Jayaraj, Mater. Sci. Eng. B, 178, 816 (2013).
32. J. A. Caraveo-Frescas, P. K. Nayak, H. A. Al-Jawhari, D. B. Granato, U. Schwingenschlogl, and H. N. Alshareef, ACS Nano, 7(6), 5160 (2013).
33. Y. Kim, J. H. Jang, J. S. Kim, S. D. Kim, and S. E. Kim, Mater. Sci. Eng. B 177, 1470 (2012).
34. T. Toyama, Y. Seo, T. Konishi, H. Okamoto, and Y. Tsutsumi, Appl. Phys. Express, 4(7), 071101 (2011).
35. E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. Ko Park, C. Hwang, and R. Martins, Appl. Phys. Lett., 97, 052105 (2010).
36. V. Kambilafka, A. Kostopoulos, M. Androulidaki, K. Tsagaraki, M. Modreanu, and E. Aperathitis," Thin Solid Films, 520, 1202 (2011).
37. S. S. Lin, J. G. Lu, Z. Z. Ye, H. P. He, X. Q. Gu, L. X. Chen, J. Y. Huang, and B. H. Zhao, Solid State Commun., 148, 25 (2008).
38. O. Lupan, T. Pauporte, and B. Viana, J. Phys. Chem. C, 114(35), 14781 (2010).
39. J. Um, B. Roh, S. Kim, and S. E. Kim, Mater. Sci. Semicond. Process., 16, 1679 (2013).