Fabrication and characterization of all-oxide heterojunction p-CuAlO2 + x/n-Zn1 - xAlxO transparent diode for potential application in "invisible electronics"

Thin Solid Films

Volumn 515, Issue 18, 2007, Pages 7324-7330

  Banerjee, A N ^a   Nandy, S ^a   Ghosh, C K ^a   Chattopadhyay, K K ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

Al doped ZnO; Cost effective procedures; CuAlO2; Heterojunction transparent diode; P type semiconducting oxide; Sol gel dip coating; Sputtering

Indexed keywords

ALUMINUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; MICROFABRICATION; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SOL-GEL PROCESS;

COST EFFECTIVE PROCEDURES; CURRENT RATIO; HETEROJUNCTION TRANSPARENT DIODES; SEMICONDUCTING OXIDES;

HETEROJUNCTIONS;

EID: 34249005894     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.02.087     Document Type: Article

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