Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Applied Physics Letters

Volumn 103, Issue 12, 2013, Pages

  Higashiwaki, Masataka ^a   Sasaki, Kohei ^a,b   Kamimura, Takafumi ^a   Hoi Wong, Man ^a   Krishnamurthy, Daivasigamani ^a   Kuramata, Akito ^b   Masui, Takekazu ^c   Yamakoshi, Shigenobu ^b  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b TAMURA CORPORATION   (Japan)

^c Koha Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CHARACTERISTICS; IMPLANTATION DOPING; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; OFF-STATE BREAKDOWN VOLTAGES; ORDERS OF MAGNITUDE; SOURCE AND DRAIN ELECTRODES; TEMPERATURE DEPENDENCE; TRANSISTOR OPERATION;

ATOMIC LAYER DEPOSITION; DIELECTRIC FILMS; GALLIUM; GATE DIELECTRICS; MOSFET DEVICES; OHMIC CONTACTS; SUBSTRATES; TIN;

GALLIUM ALLOYS;

EID: 84884854108     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4821858     Document Type: Article

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