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Volumn 108, Issue 8, 2010, Pages

Effect of Li doping in NiO thin films on its transparent and conducting properties and its application in heteroepitaxial p-n junctions

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; C-SAPPHIRE; CONDUCTING PROPERTIES; DEPOSITION CONDITIONS; DOPING CONCENTRATION; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL TRANSPORT MECHANISMS; EPITAXIALLY GROWN; FOUR-PROBE TECHNIQUES; HETEROEPITAXIAL; HETEROEPITAXIAL RELATIONSHIPS; HIGH RESOLUTION; LI-DOPED NIO; NIO THIN FILM; P-I-N HETEROJUNCTIONS; P-N HETEROJUNCTIONS; P-N JUNCTION; P-TYPE CONDUCTIVITY; RECTIFICATION BEHAVIOR; RESISTIVITY DATA; TURN ON VOLTAGE; UV-VISIBLE SPECTRA; ZNO;

EID: 78149439254     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3499276     Document Type: Article
Times cited : (146)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.