Fabrication of p-n junction diode using SnO/SnO2 thin films and its device characteristics

Electronic Materials Letters

Volumn 10, Issue 4, 2014, Pages 743-747

  Sathyamoorthy, R ^a   Abhirami, K M ^a   Gokul, B ^a   Gautam, Sanjeev ^b   Chae, Keun Hwa ^b   Asokan, K ^c  

^a KONGUNADU ARTS AND SCIENCE COLLEGE   (India)

^b Korea Institute of Science and Technology   (South Korea)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

raman analysis; TEM; thermal evaporation

Indexed keywords

ELECTRON DIFFRACTION; SEMICONDUCTOR JUNCTIONS; THERMAL EVAPORATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DEVICE CHARACTERISTICS; MULTI-LAYER THIN FILM; P-N JUNCTION; P-TYPE SNO; PN JUNCTION DIODES; RAMAN ANALYSIS; SELECTED AREA ELECTRON DIFFRACTION; THERMAL EVAPORATION METHOD;

LANTHANUM COMPOUNDS;

EID: 84905406583     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-013-3297-6     Document Type: Article

References (29)

1. D. S. Ginley and C. Bright, MRS Bull. 25, 15 (2000).
2. B. G. Lewis and D. C. Paine, MRS Bull. 25, 22 (2000).
3. K. Omura, P. Veluchamy, M. Tsuji, T. Nishio, and M. Murozono, J. Electrochem. Soc. 146, 2113 (1999).
4. B. Orel, U. Lavrencic-Stangar, and K. Kalcher, J. Electrochem. Soc. 141, L127 (1994).
5. S. J. Laverty, H. Feng, and P. Maguire, J. Electrochem. Soc. 144, 2165 (1997).
6. I. Hamberg, J. Stefan, E. M. Svensson, T. S. Eriksson, C. G. Granqvist, P. Arrenius, and F. Norin, Appl. Optics26, 2131 (1987).
7. A. V. Tadeev, G. Delabouglise, and M. Labeau, Mater. Sci. Eng. B57, 76 (1998).
8. G. Phatak and R. Lal, Thin Solid Films245, 17 (1994).
9. K. L. Chopra, S. Major, and D. K. Pandya, Thin Solid Films102, 1 (1983).
10. S. Pizzini, N. Butta, D. Narducci, and M. Palladino, J. Electrochem. Soc. 136, 1945 (1989).
11. D. M. Mattox, Thin Solid Films204, 25 (1991).
12. S. Dutta, S. Chattopadhyay, A. Sarkar, M. Chakrabarti, D. Sanyal, and D. Jana, Prog. Mater. Sci. 54, 89 (2009).
13. S. J. Jokela and M. D. McCluskey, Phys. Rev. B76, 193201 (2007).
14. D.-K. Hwang, M.-S. Oh, J.-H. Lim, and S.-J. Park, J. Phys. D: Appl. Phys. 40, R387 (2007).
15. A. Janotti and C. G. van de Walle, Phys. Rev. B76, 165202 (2007).
16. S. B. Zhang, S.-H. Wei, and A. Zunger, Phys. Rev. B63, 075205 (2001).
17. T. Yang, X. Qin, H.-H. Wang, Q. Jia, R. Yu, B. Wang, J. Wang, K. Ibrahim, X. Jiang, and Q. He, Thin Solid Films518, 5542 (2010).
18. S. Kurtin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 22, 1433 (1969).
19. G. Thomas, Nature389, 907 (1997).
20. H. Sato, T. Minami, S. Takata, and T. Yamada, Thin Solid Films236, 27 (1993).
21. A. Kudo, H. Yanagi, K. Ueda, H. Hosono, H. Kawazoe, and Y. Yano, Appl. Phys. Lett. 75, 2851 (1999).
22. K. Mcguire, Z. W. Pan, Z. L. Wang, D. Milkie, J. Menéndez, and A. M. Rao, J. Nanosci. Nanotechno. 2, 499 (2002).
23. R. S. Katiyar, P. Dawson, M. M. Hargreave, and G. R. Wilkinson, J. Phys. C: Solid State Phys. 4, 2421 (1971).
24. J. Zou, C. Xu, X. Liu, C. Wang, C. Wang, Y. Hu, and Y. Qian, J. Appl. Phys. 75, 1835 (1994).
25. D. K. Schroder, Semiconductor Material and Device Characterization, p. 202, Wiley, New York (1990).
26. J. M. Shah, Y.-L. Li, Th. Gessmann, and E. F. Schubert, J. Appl. Phys. 94, 2627 (2003).
27. K. A. Vanaja, U. M. Bhatta, R. S. Ajimsha, S. Jayalekshmi, and M. K. Jayaraj, B. Mater. Sci. 31, 753 (2008).
28. P. Matheswaran, R. Sathyamoorthy, and K. Asokan, Electron. Mater. Lett. 8, 621 (2012).
29. C. H. Lee, D. J. Choi, and Y. J. Oh, Electron. Mater. Lett. 9, 283 (2013).