Li-doped NiMgO thin films as a promising p-type transparent conductive material with wide band-gap

Materials Letters

Volumn 110, Issue , 2013, Pages 73-75

  Cao, Ling ^a,b   Li, Xiuyan ^a   Wang, Dongxiao ^a   Zhu, Liping ^b  

^a TAIYUAN UNIVERSITY OF TECHNOLOGY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Electrical properties; Optical materials; Semiconductors; Thin films; Transparent conductive oxides

Indexed keywords

OXYGEN PRESSURE; P-TYPE CONDUCTION; QUARTZ SUBSTRATE; TRANSPARENT CONDUCTIVE; TRANSPARENT CONDUCTIVE MATERIALS; TRANSPARENT CONDUCTIVE OXIDES; VISIBLE REGION; WIDE BAND GAP;

CONDUCTIVE MATERIALS; ELECTRIC PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; LITHIUM; OPTICAL MATERIALS; OXYGEN; PULSED LASER DEPOSITION; QUARTZ; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; THIN FILMS;

FILM PREPARATION;

EID: 84883203660     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2013.07.128     Document Type: Article

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