The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-6

  Abbasi, Mazhar Ali ^a   Ibupoto, Zafar Hussain ^a   Hussain, Mushtaque ^a   Nur, Omer ^a   Willander, Magnus ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Nanotubes; NiO buffer layer; White light emitting diode; ZnO nanorods

Indexed keywords

BUFFER LAYERS; CRYSTAL STRUCTURE; DIODES; ELECTROLUMINESCENCE; ENERGY POLICY; ETCHING; FABRICATION; GALLIUM NITRIDE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; LUMINESCENCE; NANORODS; NANOTUBES; NICKEL OXIDE; SCANNING ELECTRON MICROSCOPY; ZINC OXIDE; ZINC SULFIDE;

ALIGNED ZNO NANORODS; CATHODOLUMINESCENCE SPECTRA; EFFICIENT WHITE LIGHT; ENHANCED LUMINESCENCE; WHITE LIGHT EMITTING DIODES; WURTZITE CRYSTAL STRUCTURE; X-RAY DIFFRACTION STUDIES; ZNO NANOROD;

LIGHT;

EID: 84881257735     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-320     Document Type: Article

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