Tuning electrical properties of transparent p-NiO/n-MgZnO heterojunctions with band gap engineering of MgZnO

Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

  Chen, Xinman ^a   Ruan, Kaibin ^a   Wu, Guangheng ^a   Bao, Dinghua ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); COLLOIDS; DISTILLATION; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ENERGY GAP; GALLIUM ALLOYS; GELATION; IONIZATION OF GASES; OPTICAL DESIGN; OXIDE FILMS; SEMICONDUCTOR JUNCTIONS; SPIN COATING; SPIN GLASS; TECHNOLOGY; THICK FILMS; TIN; TITANIUM COMPOUNDS;

BAND GAPS; BAND-GAP ENGINEERING; BREAK DOWN VOLTAGES; COATED GLASS SUBSTRATES; CURRENT-VOLTAGE BEHAVIORS; ELECTRICAL BEHAVIORS; ELECTRICAL PROPERTIES; ELECTRONIC DEVICES; INDIUM TIN OXIDES; MG CONTENT; P-N HETEROJUNCTIONS; P-N JUNCTIONS; P-TYPE NIO; RECTIFYING CHARACTERISTICS; REVERSE-SATURATION CURRENTS; SOL - GEL; SPIN COATINGS; THIN FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 52349113415     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2987514     Document Type: Article

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