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Volumn 24, Issue 6, 2009, Pages 1259-1262
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Transparent PN junction based on tin-antimony oxide films
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Author keywords
Antimony tin oxide; PN junction; Transparent semiconductive films
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Indexed keywords
ANTIMONY OXIDES;
ATOMIC RATIO;
BAND GAPS;
BAND-GAP VALUES;
HALL EFFECT MEASUREMENT;
HOMOJUNCTION;
P-N JUNCTION;
P-TYPE;
REACTIVE DC MAGNETRON SPUTTERING;
RECTIFYING CHARACTERISTICS;
SEMICONDUCTIVE;
SEMICONDUCTIVE FILMS;
THIN LAYERS;
ANTIMONY;
DISTILLATION;
HALL EFFECT;
MAGNETIC FIELD EFFECTS;
TIN;
OXIDE FILMS;
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EID: 71049143932
PISSN: 1000324X
EISSN: None
Source Type: Journal
DOI: 10.3724/SP.J.1077.2009.09217 Document Type: Article |
Times cited : (1)
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References (23)
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