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Volumn 24, Issue 6, 2009, Pages 1259-1262

Transparent PN junction based on tin-antimony oxide films

Author keywords

Antimony tin oxide; PN junction; Transparent semiconductive films

Indexed keywords

ANTIMONY OXIDES; ATOMIC RATIO; BAND GAPS; BAND-GAP VALUES; HALL EFFECT MEASUREMENT; HOMOJUNCTION; P-N JUNCTION; P-TYPE; REACTIVE DC MAGNETRON SPUTTERING; RECTIFYING CHARACTERISTICS; SEMICONDUCTIVE; SEMICONDUCTIVE FILMS; THIN LAYERS;

EID: 71049143932     PISSN: 1000324X     EISSN: None     Source Type: Journal    
DOI: 10.3724/SP.J.1077.2009.09217     Document Type: Article
Times cited : (1)

References (23)
  • 22
    • 71049179648 scopus 로고    scopus 로고
    • The International Centre for Diffraction Data, PCPDFWIN Version 2.02, May 1999, JCPDS-ICDD, No. PDF#782066 and No. PDF #770452.
    • The International Centre for Diffraction Data, PCPDFWIN Version 2.02, May 1999, JCPDS-ICDD, No. PDF#782066 and No. PDF #770452.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.