Microstructure and conductance-slope of InAs/GaSb tunnel diodes

Journal of Applied Physics

Volumn 115, Issue 23, 2014, Pages

  Iutzi, Ryan M ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; DISLOCATIONS (CRYSTALS); FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; INDIUM ANTIMONIDES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; POINT DEFECTS; STRAIN;

BAND ALIGNMENTS; ELECTRICAL CHARACTERIZATION; ELECTRICAL MEASUREMENT; MEASUREMENTS OF; NON-IDEALITIES; SIMILAR MATERIAL; SUBTHRESHOLD SWING; TUNNEL FIELDEFFECT TRANSISTOR (TFETS);

HETEROJUNCTIONS;

EID: 84903182443     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4883756     Document Type: Article

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