Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method

Japanese Journal of Applied Physics

Volumn 47, Issue 11, 2008, Pages 8506-8509

  Aida, Hideo ^a   Nishiguchi, Kengo ^a   Takeda, Hidetoshi ^a   Aota, Natsuko ^a   Sunakawa, Kazuhiko ^a   Yaguchi, Yoichi ^a  

^a Adamant Namiki Precision Jewel Co Ltd   (Japan)

Author keywords

Ga2O3; Crystal growth; EFG; EPDs; Induction heating; X ray analysis

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; CRYSTALLOGRAPHY; CRYSTALS; DISLOCATIONS (CRYSTALS); FILM GROWTH; GALLIUM; GRAIN BOUNDARIES; GROWTH (MATERIALS); HEATING; INDUCTION HEATING; X RAY ANALYSIS;

DISLOCATION DENSITIES; EFG; EPDS; ETCH PITS; GROWTH CONDITIONS; GROWTH METHOD; GROWTH PARAMETERS; KOH SOLUTION; X-RAY ROCKING CURVE (XRC);

SINGLE CRYSTALS;

EID: 58749116457     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8506     Document Type: Article

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