A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes

Advanced Materials

Volumn 15, Issue 17, 2003, Pages 1409-1413

  Narushima, Satoru ^a   Mizoguchi, Hiroshi ^b,e   Shimizu, Ken Ichi ^c   Ueda, Kazushige ^a,d   Ohta, Hiromichi ^b   Hirano, Masahiro ^b   Kamiya, Toshio ^a,b   Hosono, Hideo ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c KEIO UNIVERSITY   (Japan)

^d KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^e OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SILICON; CRYSTAL DEFECTS; CRYSTAL LATTICES; DEGRADATION; ENERGY GAP; HETEROJUNCTIONS; HYDROGENATION; OXIDES; PHOTOCHEMICAL REACTIONS; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE;

AMORPHOUS OXIDE SEMICONDUCTOR; BANDGAP; LIGHT INDUCED DEGRADATION;

SEMICONDUCTOR DIODES;

EID: 0141518508     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200304947     Document Type: Article

References (32)

1. E. P. Denton, H. Rawson, J. E. Stanworth, Nature 1954, 173, 1030.
2. H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, H. Hosono, Nature 1997, 389, 939.
3. H. Kawazoe, H. Yanagi, K. Ueda, H. Hosono, MRS Bull. 2000, 25, 28.
4. K. Ueda, T. Hase, H. Yanagi, H. Kawazoe, H. Hosono, H. Ohta, M. Orita, M. Hirano, J. Appl. Phys. 2001, 89, 1790.
5. H. Yanagi, T. Hase, S. Ibuki, K. Ueda, H. Hosono, Appl. Phys. Lett. 2001, 78, 1583.
6. A. Kudo, H. Yanagi, H. Hosono, H. Kawazoe, Appl. Phys. Lett. 1998, 73, 220.
7. H. Ohta, K. Kawamura, N. Sarukura, M. Orita, M. Hirano, H. Hosono, Appl. Phys. Lett. 2000, 77, 475.
8. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, Science 2003, 300, 1269.
9. H. Yanagi, K. Ueda, H. Ohta, M. Orita, M. Hirano, H. Hosono, Solid State Commun. 2002, 121, 15.
10. K. Hayashi, S. Matsuishi, T. Kamiya, M. Hirano, H. Hosono, Nature 2002, 419, 462.
11. W. E. Spear, P. G. LeComber, Solid State Commun. 1975, 17, 1193.
12. C. W. Ow-Yang, D. Spinner, Y. Shigesato, D. C. Paine, J. Appl. Phys. 1998, 83, 145.
13. D. C. Paine, T. Whitson, D. Janiac, R. Beresford, C. Ow-Yang, B. Lewis, J. Appl. Phys. 1999, 85, 8445.
14. M. Yasukawa, H. Hosono, N. Ueda, H. Kawazoe, Jpn. J. Appl. Phys. 1996, 34, L281.
15. H. Hosono, N. Kukuchi, N. Ueda, H. Kawazoe, K. Shimizu, Appl. Phys. Lett. 1995, 67, 2663.
16. H. Hosono, Y. Yamashita, N. Ueda, H. Kawazoe, K. Shimizu, Appl. Phys. Lett. 1996, 68, 661.
17. M. Orita, H. Ohta, M. Hirano, S. Narushima, H. Hosono, Philos. Mag. B 2000, 81, 501.
18. J. D. Perkins, J. A. del Cueto, J. L. Alleman, C. Warmsingh, B. M. Keyes, L. M. Gedvilas, P. A. Parilla, B. To, D. W. Readey, D. S. Ginley, Thin Solid Films 2002, 411, 152.
19. N. Mott, Conduction in Non-Crystalline Materials, 2nd ed., Clarendon, Oxford 1993, p. 95.
20. S. Narushima, H. Hosono, J. Jisun, T. Yoko, K. Shimakawa, J. Non-Cryst. Solids 2000, 274, 313.
21. S. Narushima, M. Orita, M. Hirano, H. Hosono, Phys. Rev. B 2002, 66, 035203-1.
22. N. Tohge, Y. Yamamoto, T. Minami, M. Tanaka, Appl. Phys. Lett. 1979, 34, 640.
23. N. Tohge, T. Minami, M. Tanaka, J. Non-Cryst. Solids 1980, 37, 23.
24. I. S. Shaplygin, V. B. Lazarev, Russ. J. Inorg. Chem. 1980, 25, 504.
25. I. S. Shaplygin, I. I. Prosychev, V. B. Lazarev, Russ. J. Inorg. Chem. 1986, 31, 1649.
26. H. Mizoguchi, M. Hirano, S. Fujitsu, T. Kakeuchi, K. Ueda, H. Hosono, Appl. Phys. Lett. 2002, 80, 1207.
27. R. Asokamani, C. U. M. Trinadh, G. Pari, S. Natarajan, Mod. Phys. Lett. B 1995, 9, 701.
28. J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi 1966, 15, 627.
29. The Hall voltage was below the sensitivity limit of our measurement apparatus.
30. 4 are different, the heterojunction is thought to have a conduction band offset of ∼1.7 eV, forming a Schottky-type barrier. Therefore the electron injection at a forward bias condition is also affected by space charge-limited current, increasing the apparent diode factor.
31. N. Uekawa, T. Suzuki, S. Ozeki, K. Kaneko, Langmuir 1992, 8, 1.
32. T. Nakamura, T. Shimura, M. Ito, Y. Takeda, J. Solid State Chem. 1993, 103, 523.