GaN-Based Modulation-Doped FETs and Heterojunction Bipolar Transistors

Nitride Semiconductors: Handbook on Materials and Devices

Volumn , Issue , 2006, Pages 547-626

  Morkoç, Hadis ^a   Liu, Lianghong ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

Electron transport properties in GaN and GaN AIGaN heterostructures; GaN based modulation doped FETs; Heterojunction bipolar transistors; MODFET model; Modulation doped field effect transistors (MODFETs)

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRON ABSORPTION; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; HIGH TEMPERATURE APPLICATIONS; III-V SEMICONDUCTORS; MODULATION; NOISE FIGURE; OPTOELECTRONIC DEVICES; SEMICONDUCTOR ALLOYS; THERMAL CONDUCTIVITY;

EXPERIMENTAL DEVICES; GAN BASED; HIGH-TEMPERATURE ELECTRONICS; MINIMUM NOISE FIGURE; MODULATION-DOPED FIELD EFFECT TRANSISTORS; POLARIZATION INDUCED CHARGES; POWER-ADDED EFFICIENCY; SINGLE STAGE AMPLIFIERS;

IODINE COMPOUNDS;

EID: 84958857628     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/3527607641.ch12     Document Type: Chapter

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