Piezoresistive effect in wurtzite n-type GaN

Applied Physics Letters

Volumn 68, Issue 6, 1996, Pages 818-819

  Bykhovski, A D ^a,b   Kaminski, V V ^b   Shur, M S ^a   Chen, Q C ^c   Khan, M A ^c  

^a University of Virginia   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000266351     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116543     Document Type: Article

References (6)

1. J. G. Gualieri, J. A. Kosinski, and A. Ballato, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 41, 53 (1994).
2. J. S. Shor, L. Bemis, and A. D. Kurtz, IEEE Trans. Electron Devices 41, 661 (1994).
3. A. Bykhovski, B. Gelmont, M. Shur, and A. Khan, J. Appl. Phys. 77, 1616 (1995).
4. M. Shur, B. Gelmont, and M. A. Khan (unpublished).
5. G. D. O'Clock and M. T. Duffy, Appl. Phys. Lett. 23, 55 (1973).
6. J. Fraden, AIP Handbook of Modern Sensors (American Institute of Physics, Woodbury, NY, 1993), p. 167.