Atomic structure of the {10̄10} inversion domains in GaN/sapphire layers

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 323-328

  Potin, V ^a   Ruterana, P ^a   Nouet, G ^a   Salvador, A ^a   Morkoc, H ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; ELECTRON MICROSCOPY; NITRIDES; SAPPHIRE; SUBSTRATES;

INVERSION DOMAINS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030691491     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-323     Document Type: Conference Paper

References (14)