Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

Applied Physics Letters

Volumn 79, Issue 16, 2001, Pages 2567-2569

  Zhang, B J ^a   Egawa, T ^a   Zhao, G Y ^a   Ishikawa, H ^a   Umeno, M ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035886143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1410355     Document Type: Article

References (9)

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