Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 211-219

  Asbeck, P M ^a   Yu, E T ^a   Lau, S S ^a   Sun, W ^a   Dang, X ^a   Shi, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; NITRIDES; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

ACCEPTOR DOPING; ALUMINUM GALLIUM NITRIDE; BASE CONDUCTIVITY; GALLIUM NITRIDE;

ELECTRIC CONDUCTIVITY OF SOLIDS;

EID: 0034140275     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00226-9     Document Type: Article

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