Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 530-533

  Rumyantsev, Serguei L ^a   Pala, Nezih ^a   Shur, Michael S ^a   Borovitskaya, Elena ^a   Dmitriev, Alexander P ^b   Levinshtein, Michael E ^b   Gaska, Remis ^c   Khan, M Asif ^d   Yang, Jinwei ^d   Hu, Xuhong ^d   Simin, Grigory ^d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^d University of South Carolina   (United States)

Author keywords

1 f noise; Gallium nitride; Generation recombination noise; HFETs; Low frequency noise

Indexed keywords

ACTIVATION ENERGY; GALLIUM NITRIDE; HETEROJUNCTIONS; PARAMETER ESTIMATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SIGNAL NOISE MEASUREMENT; SILICON CARBIDE; SPURIOUS SIGNAL NOISE; SUBSTRATES;

ALUMINUM GALLIUM NITRIDE; GENERATION RECOMBINATION NOISE; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; LOW FREQUENCY NOISE;

FIELD EFFECT TRANSISTORS;

EID: 0035279248     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906447     Document Type: Article

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