Gaseous etching for characterization of structural defects in silicon carbide single crystals

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 421-424

  Powell, J A ^a   Larkin, D J ^a   Trunek, A J ^b  

^a NASA GLENN RESEARCH CENTER   (United States)

^b NONE   (United States)

Author keywords

Characterization; Defects; Dislocations; Etching; Step Bunching; Transformation

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ETCHING; HIGH TEMPERATURE EFFECTS; PHASE TRANSITIONS; SILICON CARBIDE; SUBSTRATES;

STEP BUNCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 3743104892     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.421     Document Type: Article

References (13)

1. R C Glass, D Henshall, V F Tsvetkov and C. H. Carter Jr., physica status solidi (b) 202 (1997), p. 149.
2. J A Powell et al., Appl. Phys. Lett. 59 (1991) p. 183.
3. K Koga, Y Fujikawa, Y Ueda and T Yamaguchi, Amorphous and Crystalline Silicon Carbide IV Springer Proceedings in Physics 71 (1992) p. 96.
4. J A Powell, D J Larkin, P G Neudeck, J W Yang and P Pirouz, Silicon Carbide and Related Materials Institute of Physics Conference Series 137 (Bristol: IOP Publishing 1994) p. 161.
5. C Hallin, A S Bakin, F Owman, P Martensson, O Kordina and E Janzen, Silicon Carbide and Related Materials 1995 Institute of Physics Conference Series 142 (Bristol, UK: Institutue of Physics Publishing 1996) p. 613.
6. T L Chu and R B Campbell, J. Electrochemical Society 112 (1965) p. 955
7. A A Burk, Jr. and L B Rowland, J. Cryst. Growth 167 (1996) p. 586.
8. J A Powell, L G Matus and M A Kuczmarski, J. Electrochem. Soc. 134 (1987) p. 1558.
9. J A Powell, J. Opt. Soc. Amer. 62 (1972) p. 341.
10. J A Powell, D J Larkin, P B Abel, L Zhou and P Pirouz, Silicon Carbide and Related Materials 1995 Institute of Physics Conference Series 142 (Bristol, UK: Institutue of Physics Publishing 1996) p. 77.
11. J A Powell and H A Will, J. Appl. Phys. 43 (1972) p. 1400.
12. L Zhou, P Pirouz and J A Powell, International Conference on Silicon Carbide and III-Nitrides - 1997 (Stockholm, Sweden).
13. P Pirouz, Inst. Phys. Conf. Ser. 104 (1989) p. 49.