메뉴 건너뛰기




Volumn 20, Issue 6, 1999, Pages 277-279

AlGaN/GaN heterojunction bipolar transistor

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

EID: 0032672027     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.767097     Document Type: Article
Times cited : (127)

References (7)
  • 6
    • 0001556024 scopus 로고    scopus 로고
    • Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
    • U. V. Bhapkar and M. S. Shur, "Monte Carlo calculation of velocity-field characteristics of wurtzite GaN," J. Appl. Phys., vol. 82, no. 4, pp. 1649-1655, 1997.
    • (1997) J. Appl. Phys. , vol.82 , Issue.4 , pp. 1649-1655
    • Bhapkar, U.V.1    Shur, M.S.2
  • 7
    • 0026867861 scopus 로고
    • Hole compensation mechanism of p-type GaN films
    • S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, "Hole compensation mechanism of p-type GaN films," Jpn. J. Appl. Phys., vol. 31, no. 5A, pp. 1258-1266, 1992.
    • (1992) Jpn. J. Appl. Phys. , vol.31 , Issue.5 A , pp. 1258-1266
    • Nakamura, S.1    Iwasa, N.2    Senoh, M.3    Mukai, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.