AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 581-585

  Lu, Wu ^a,b   Yang, Jinwei ^a,c   Khan, M Asif ^a,c   Adesida, Ilesanmi ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c University of South Carolina   (United States)

Author keywords

fMAX; fT; GaN; HEMTs; Microwave noise

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MICROWAVES; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; DRAIN CURRENT; MICROWAVE NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035280079     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906454     Document Type: Article

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