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Semiconductor Science and Technology

Volumn 17, Issue 5, 2002, Pages 476-479

Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors

(10) Rumyantsev, S L a,b Pala, N a Shur, M S a Gaska, R a,c Levinshtein, M E b Ivanov, P A b Asif Khan, M d Simin, G d Hu, X b,d Yang, J d

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b IOFFE INSTITUTE (Russian Federation)

c SENSOR ELECTRONIC TECHNOLOGY INC (United States)

d University of South Carolina (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; ELECTRON TUNNELING; GALLIUM NITRIDE; HETEROJUNCTIONS; OPTICAL COMMUNICATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

HOOGE PARAMETER;

FIELD EFFECT TRANSISTORS;

EID: 0036567040 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/5/312 Document Type: Article

Times cited : (29)

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