Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 72, Issue 10, 1998, Pages 1214-1216

  Gotz W ^a   Romano, L T ^b   Walker, J ^b   Johnson, N M ^b   Molnar, R J ^c  

^a HEWLETT PACKARD COMPANY   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000322066     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121017     Document Type: Article

References (10)

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