Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

Applied Physics Letters

Volumn 74, Issue 14, 1999, Pages 2002-2004

  Della Sala, Fabio ^a   Di Carlo, Aldo ^a   Lugli, Paolo ^a   Bernardini, Fabio ^c   Fiorentini, Vincenzo ^c   Scholz, Reinhard ^c   Jancu, Jean Marc ^b  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b SCUOLA NORMALE SUPERIORE   (Italy)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

TIGHT BINDING APPROACH;

QUANTUM WELL LASERS;

EID: 0032607989     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123727     Document Type: Article

References (20)

1. S Nakamura, M. Senoh, A. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, and H. Kiyoku, Appl. Phys. Lett. 70, 2753 (1997).
2. S. Nakamura, M. Senoh, A. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 2014 (1998); 73, 832 (1998).
3. S. Nakamura, M. Senoh, A. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 2014 (1998); 73, 832 (1998).
4. M. B. Nardelli, K. Rapcewicz, and J. Bernholc, Appl. Phys. Lett. 71, 3135 (1997).
5. K. Domen, A. Kuramata, and T. Tanahashi, Appl. Phys. Lett. 72, 1359 (1998).
6. W. Fang and S. L. Chuang, Appl. Phys. Lett. 67, 751 (1995).
7. Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, J. Appl. Phys. 84, 1813 (1998).
8. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).
9. M. Osinski, P. Perlin, P. G. Eliseev, J. Lee, and V. A. Smagley, J. Cryst. Growth 189/190, 803 (1998).
10. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
11. F. Bernardini and V. Fiorentini, Phys. Rev. B 57, R9427 (1998); F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. Lett. 79, 3958 (1997).
12. F. Bernardini and V. Fiorentini, Phys. Rev. B 57, R9427 (1998); F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. Lett. 79, 3958 (1997).
13. Jin Seo Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57, R9435 (1998).
14. T. Honda, T. Miyamoto, T. Sakaguchi, H. Kawanishi, F. Koyanca, and K. Iga, J. Cryst. Growth 189/190, 644 (1998).
15. A. Di Carlo, S. Pescetelli, M. Paciotti, P. Lugli, and M. Graf, Solid State Commun. 98, 803 (1996); A. Di Carlo, Mater. Res. Soc. Symp. Proc. 491, 389 (1998).
16. A. Di Carlo, S. Pescetelli, M. Paciotti, P. Lugli, and M. Graf, Solid State Commun. 98, 803 (1996); A. Di Carlo, Mater. Res. Soc. Symp. Proc. 491, 389 (1998).
17. J-M. Jancu, R. Scholz, F. Beltram, and F. Bassani, Phys. Rev. B 57, 6493 (1998); R. Scholz, J-M. Jancu, and F. Bassani, Mater. Res. Soc. Symp. Proc. 491, 383 (1998).
18. J-M. Jancu, R. Scholz, F. Beltram, and F. Bassani, Phys. Rev. B 57, 6493 (1998); R. Scholz, J-M. Jancu, and F. Bassani, Mater. Res. Soc. Symp. Proc. 491, 383 (1998).
19. We use this envelope-function-like picture [which can be relaxed in the tight-binding scheme, see M. Graf and P. Vogl, Phys. Rev. B 51, 4940 (1995)] in order to make contact with nonself-consistent data (see Ref. 3).
20. T. Takeuchi, S. Sota, M. Kasturagawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L382 (1997).