Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 82, Issue 11, 1997, Pages 5472-5479

  Tarsa, E J ^a   Heying, B ^a   Wu, X H ^a   Fini, P ^a   DenBaars, S P ^a   Speck, J S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001528599     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365575     Document Type: Article

References (25)

1. H. Sakai, T. Kiode, H. Suzuki, M, Yamaguchi, S. Yamasaki, M. Kioke, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 34, L1429 (1995).
2. H. Tews, R. Averbeck, A. Graber, and H. Reichert, Electron. Lett. 32, 2004 (1996).
3. J. M. Van Hove, G. Carpenter, E. Nelson, A. Wowchak, and P. P. Chow, J. Cryst. Growth 164, 154 (1996).
4. R. P. Vaudo, I. D. Goepfert, T. D. Moustakas, D. M. Beyea, T. J. Frey, and K. Meehan, J. Appl. Phys. 79, 2779 (1996).
5. See, for example, S. Mohammad, W. Kim, A. Salvador, and H. Morkoç, MRS Bull. 22, 22 (1997), and references therein.
6. M. A. L. Johnson, S. Fujita, W. H. Rowland, Jr., W. C. Hughes, Y. W. He, N. A. El-Masry, J. W. Cook, Jr., J. F. Schetzina, J. Ren, and J. A. Edmond, J. Electron. Mater. 25, 793 (1996).
7. T. D. Moustakas and R. J. Molnar, Mater. Res. Soc. Symp. Proc. 281, 753 (1993).
8. X. H. Wu, S. P. DenBaars, and J. S. Speck (unpublished).
9. R. Held, D. E. Crawford, A. M. Joshnston, A. M. Dabiran, and P. I. Cohen, J. Electron. Mater. 26, 272 (1997).
10. Z. Yu, S. L. Buczkowski, N. C. Giles, and T. H. Meyers, and M. R. Richards-Babb, Appl. Phys. Lett. 69, 2731 (1996).
11. A. Botchkarev, A. Salvador, B. Sverdlov, J. Myoung, and H. Morkoç, J. Appl. Phys. 77, 4455 (1995).
12. R. J. Molnar and T. D. Moustakas, J. Appl. Phys. 76, 4587 (1994).
13. W. C. Hughes, W. H. Rowland, Jr., M. A. L. Johnson, S. Fujita, J. W. Cook, Jr., J. F. Schetzina, J. Ren, and J. A. Edmond, J. Vac. Sci. Technol. B 13, 1571 (1995).
14. P. Hacke, G. Feuillet, H. Okumura, and S. Yoshida, Appl. Phys. Lett. 69, 2507 (1996).
15. S. H. Cho, H. Sakamoto, K. Akimoto, Y. Okada, and M. Kawabe, Jpn. J. Appl. Phys., Part 2 34, L236 (1995).
16. L. T. Romano, B. S. Krusor, R. Singh, and T. D. Moustakas, J. Electron. Mater. 26, 285 (1997).
17. S. H. Cho, T. Maruyama, and K. Akimoto, Jpn. J. Appl. Phys., Part 2 34, L1575 (1995).
18. H. Morkoç, A. Botchkarev, A. Salvador, and B. Sverdlov, J. Cryst. Growth 150, 887 (1995).
19. Measurements were performed using a CI Systems NTM1. See C. Kim, R. Cao, and P. Pianetta, J. Vac. Sci. Technol. B 11, 1575 (1993).
20. H. A. Jenkinson, J. M. Zavada, J. S. Speck, and S. P. DenBaars, Proceedings of the 30th Army Science Conference, 1995 (unpublished).
21. X. Zhang, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler, and M. Razeghi, Appl. Phys. Lett. 67, 2028 (1995).
22. F. A. Ponce, D. P. Bour, W. T. Young, M. Saunders, and J. W. Steeds, Appl. Phys. Lett. 69, 337 (1996).
23. D. L. Smith, in Thin Film Deposition (McGraw Hill, New York, 1995), pp. 119-184.
24. J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996).
25. B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 68, 643 (1996).