Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs

Solid-State Electronics

Volumn 45, Issue 5, 2001, Pages 677-682

  Oxley, C H ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

Fukui; Gallium nitride (GaN) HEMT; Noise figure

Indexed keywords

GALLIUM NITRIDE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

FUKUI EQUATION; NOISE FIGURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035333307     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00069-7     Document Type: Article

References (13)

1. Robust low microwave noise GaN modfets with 0.6 dB noise figure at 10 GHz
2. Optimal noise figure of microwave GaAs MESFETs
3. A new relationship between the Fukui coefficient and optimum current value for low noise operation of field-effect transistors
4. A new method for calculating the noise parameters of MESFETs and TEGFETs
5. Monte Carlo calculation of the velocity-field characteristics of Wurtzite GaN
6. Measurement of transit time and carrier velocity under high electron field in III-nitride PIN diodes
7. Comparison of wide band gap and III-V semiconductor devices
8. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
9. Simple models for high frequency MESFETs and comparison with experimental results
10. Wide bandgap semiconductor materials and devices