Microwave performance of A1GaN/GaN inverted MODFET's

IEEE Electron Device Letters

Volumn 18, Issue 6, 1997, Pages 293-295

  Aktas, O ^a   Fan, Z F ^a   Botchkarev, A ^a   Mohammad, S N ^a,b   Roth, M ^c   Jenkins, T ^c   Kehias, L ^c   Morkoc H ^a,c  

^a University of Illinois at Urbana Champaign   (United States)

^b Howard University   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

CUTOFF FREQUENCIES; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

GATES (TRANSISTOR);

EID: 0031168498     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.585363     Document Type: Article

References (19)

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