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Volumn 75, Issue 25, 1999, Pages 4016-4018

Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000151219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125523     Document Type: Article
Times cited : (169)

References (16)
  • 3
    • 0017465761 scopus 로고
    • T. H. Ning, C. M. Osburn, and N. H. Yu, J. Electron. Mater. 6, 65 (1977); L. Forbes, E. Sun, R. Alders, and J. Moll. IEEE Trans. Electron Devices ED-26, 1816 (1979).
    • (1977) J. Electron. Mater. , vol.6 , pp. 65
    • Ning, T.H.1    Osburn, C.M.2    Yu, N.H.3
  • 5
    • 0022683296 scopus 로고
    • A. Kastalsky and R. A. Kiehl, IEEE Trans. Electron Devices ED-33, 414 (1986); R. Fisher, T. J. Drummond, J. Klem, W. Kopp, T. S. Henderson, D. Perrachione, and J. Morkoc, ibid. ED-31, 1028 (1984).
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 414
    • Kastalsky, A.1    Kiehl, R.A.2
  • 16
    • 84927992698 scopus 로고
    • and references therein
    • P. M. Mooney, J. Appl. Phys. 67, R1 (1990), and references therein.
    • (1990) J. Appl. Phys. , vol.67
    • Mooney, P.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.