Wurtzite GaN-Based heterostructures by molecular beam epitaxy

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 3, 1998, Pages 537-549

  Morkoç, Hadis ^{a,b,c,d,e,f,g,h,i,j,k,l,m,n,o}  

^a IEEE   (United States)

^b Virginia Commonwealth University   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d ISTANBUL TECHNICAL UNIVERSITY   (Turkey)

^e Department of Obstetrics Gynecology   (United States)

^f VARIAN MEDICAL SYSTEMS   (United States)

^g UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^h LUCENT TECHNOLOGIES   (United States)

ⁱ CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^j VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^k Amer Assoc for the Adv of Science   (United States)

^l AMERICAN PHYSICAL SOCIETY   (United States)

^m Material Research Society   (United States)

ⁿ OPTICAL SOCIETY OF AMERICA   (United States)

^o Sigma Xi ^*  (United States)

more..

Author keywords

Detectors; Epitaxial growth; Gallium components; Light emitting diodes; Semiconductor heterojunctions

Indexed keywords

AMMONIA; CARRIER CONCENTRATION; LIGHT EMITTING DIODES; LUMINESCENT DEVICES; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TERNARY SYSTEMS; THERMAL EFFECTS;

WURTZITE STRUCTURES;

HETEROJUNCTIONS;

EID: 0032067047     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.704115     Document Type: Article

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