Low frequency and 1/f noise in wide-gap semiconductors: Silicon carbide and gallium nitride

IEE Proceedings: Circuits, Devices and Systems

Volumn 149, Issue 1, 2002, Pages 32-39

  Levinshtein, M E ^a   Rumyantsev, S L ^a   Shur, M S ^a   Gaska, R ^a   Khan, M A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FIELD EFFECT TRANSISTORS; FREQUENCIES; GALLIUM NITRIDE; HETEROJUNCTIONS; OPTICAL COMMUNICATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

WIDE-GAP SEMICONDUCTORS;

SEMICONDUCTOR DEVICES;

EID: 0036477580     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20020328     Document Type: Conference Paper

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