High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates

IEEE Electron Device Letters

Volumn 20, Issue 4, 1999, Pages 161-163

  Sheppard, S T ^a   Doverspike, K ^a   Pribble, W L ^a   Allen, S T ^a   Palmour, J W ^a   Kehias, L T ^b   Jenkins, T J ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GATES (TRANSISTOR); HETEROJUNCTIONS; MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES;

POWER-ADDED EFFICIENCY (PAE);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032668826     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.753753     Document Type: Article

References (10)

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