High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates

IEEE Electron Device Letters

Volumn 20, Issue 4, 1999, Pages 161-163

  Sheppard, S T ^a   Doverspike, K ^a   Pribble, W L ^a   Allen, S T ^a   Palmour, J W ^a   Kehias, L T ^b   Jenkins, T J ^b  

^a Research Triangle Park   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GATES (TRANSISTOR); HETEROJUNCTIONS; MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES;

POWER-ADDED EFFICIENCY (PAE);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032668826     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.753753     Document Type: Article

References (10)

1. P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan. J. V. Hove, and J. Redwing, "Piezoelectric charge densities in AlGaN/GaN HFET's," Electron. Lett., vol. 33, no. 14, pp. 1230-1231, 1997.
2. L. F. Eastman, K. Chu, J. Smart, and J. R. Shealy, "GaN materials for high-power microwave amplifiers," in Mater. Res. Soc. Symp. Proc., 1998, vol. 512, pp. 3-7.
3. Y.-F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. Denbaars, and U. K. Mishra, "High Al-content AlGaN/GaN MODFET's for ultrahigh performance," IEEE Electron Device Lett., vol. 19, pp. 50-53, Feb. 1998.
4. 0.5N/GaN MODFET's with power densities >3 W/mm at 18 GHz," Electron. Lett., vol. 33, no. 20, pp. 1742-1743, Sept. 25, 1997.
5. Y.-F. Wu, B. J. Thibeault, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, "3-W AlGaN/GaN HEMT's on sapphire substrates with thermal management by flip-chip bonding," in 56th Annu. Device Research Conf., Charlottesville, VA, June 1998, pp. 118-119.
6. G. J. Sullivan, M. Y. Chen, J. A. Higgins, J. W. Yang, Q. Chen, R. L. Pierson, and B. T. McDermott, "High-power 10-GHz operation of AlGaN HFET's on insulating SiC," IEEE Electron Device Lett., vol. 19, pp. 198-200, June 1998.
7. R. A. Sadler, S. T. Allen, T. S. Alcorn, W. L. Pribble, J. Sumakeris, J. W. Palmour, and L. T. Kehias, "SiC MESFET with output power of 50 W atts CW at S-band," in 56th Annu. Device Research Conf., Charlottesville, VA, June 1998, pp. pp. 92-93.
8. R. Gaska, A. Osinsky, J. W. Yang, and M. S. Shur, "Self-heating in high-power AlGaN-GaN HFET's," IEEE Electron Device Lett., vol. 19, pp. 89-91, Mar. 1998.
9. H. P. Gillis, D. A. Choutov, and K. P. Martin, "The dry etching of group III-nitride wide bandgap semiconductors," J.O.M., vol. 48, no. 8, pp. 50-55, Aug. 1996.
10. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, and T. J. Jenkins, "High-power GaN/AlGaN HEMT's on silicon carbide," in 56th Annu. Device Research Conf., Charlottesville, VA, June 1998.