High Al-content AlGaN/GaN MODFET's for ultrahigh performance

IEEE Electron Device Letters

Volumn 19, Issue 2, 1998, Pages 50-53

  Wu, Y F ^a   Keller, B P ^a   Fini, P ^a   Keller, S ^a   Jenkins, T J ^b   Kehias, L T ^d   Denbaars, S P ^d   Mishra, U K ^c  

^a University of California   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; PHOTOLITHOGRAPHY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

MOLE FRACTION;

FIELD EFFECT TRANSISTORS;

EID: 0031999751     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.658600     Document Type: Article

References (9)

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2. O. Akatas, Z. F. Fan, A. Botchkarev, S. N. Mohammad, M. Roth, T. Jenkins, L. Kehias, and H. Morkoc, "Microwave performance of AlGaN/GaN inverted MODFETs," IEEE Electron Device Lett., vol. 18, pp. 293-295, June 1997.
3. Y.-F. Wu, S. Keller, P. Kozodoy, B. P. Keller, P. Parikh, D. Kapolnek, S. P. Denbaars, and U. K. Mishra, "Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V," IEEE Electron Device Lett., vol. 18, pp. 290-292, June 1997.
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