Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Applied Physics Letters

Volumn 79, Issue 16, 2001, Pages 2651-2653

  Simin, G ^a   Koudymov, A ^a   Tarakji, A ^a,b   Hu, X ^a   Yang, J ^a   Asif Khan, M ^a   Shur, M S ^b,c   Gaska, R ^b  

^a University of South Carolina   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035886086     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1412282     Document Type: Article

References (11)

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