Near-ideal platinum-GaN Schottky diodes

Electronics Letters

Volumn 32, Issue 6, 1996, Pages 598-599

  Mohammad, S N ^a   Fan, Z ^a   Botchkarev, A E ^a   Kim, W ^a   Aktas, O ^a   Salvador, A ^a   Morkoc H ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Gallium nitride; Schottky barrier diodes

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRONS; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PLATINUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE MEASUREMENT;

BOLTZMAN CONSTANT; CAPACITANCE VOLTAGE CHARACTERISTICS; CAPACITANCE VOLTAGE MEASUREMENT; CURRENT VOLTAGE MEASUREMENT; PHONON SCATTERING; REACTIVE MOLECULAR BEAM EPITAXY METHOD; RICHARDSON CONSTANT; SATURATION CURRENT; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 0030108134     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960354     Document Type: Article

References (13)

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