SCOPUS 정보 검색 플랫폼

Volumn 46, Issue 4, 2002, Pages 467-476

Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3

(11) Luo, B a Johnson, J W a Gila, B P b Onstine, A b Abernathy, C R b Ren, F a Pearton, S J b Baca, A G c Dabiran, A M d Wowchack, A M d Chow, P P d

a University of Florida (United States)

b UNIVERSITY OF FLORIDA (United States)

c SANDIA NATIONAL LABORATORIES (United States)

d SVT ASSOCIATES (United States)

Author keywords

AlGaN GaN HEMTs; dc and rf characterizations; Hydrogen free dielectrics; MgO; Sc2O3; Surface passivation

Indexed keywords

CRYSTAL GROWTH; DIELECTRIC MATERIALS; GALLIUM NITRIDE; LEAKAGE CURRENTS; MAGNESIA; MOLECULAR BEAM EPITAXY; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN CURRENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 18244389724 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00314-8 Document Type: Article

Times cited : (45)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.