AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

Applied Physics Letters

Volumn 73, Issue 8, 1998, Pages 1089-1091

  Levinshtein, M E ^a   Rumyantsev, S L ^a   Gaska, R ^b   Yang, J W ^b   Shur, M S ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b APA Optronics   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000232109     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122093     Document Type: Article

References (20)

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