Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2843-2852

  Klein, P B ^a   Binari, S C ^a   Freitas, J A ^a   Wickenden, A E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; PHOTOIONIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

BUILT-IN ELECTRIC FIELDS; CONDUCTING CHANNELS; HIGH RESISTIVITY REGIONS; INTENSITY DEPENDENCE; OPTICALLY INDUCED; PHOTOIONIZATION CROSS SECTION; PHOTOIONIZATION SPECTROSCOPY; TRANSFER OF CHARGES;

MESFET DEVICES;

EID: 84875112833     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1287127     Document Type: Article

References (34)

1. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, and T. J. Jenkins, IEEE Electron Device Lett. EDLEDZ 20, 161 (1999).
2. L. F. Eastman, K. Chu, J. Smart, and J. R. Shealy, Mater. Res. Soc. Symp. Proc. MRSPDH 512, 3 (1998).
3. C. Nguyen, N. X. Nguyen, and D. E. Grider, Electron. Lett. ELLEAK 35, 1380 (1999).
4. S. Trassaert, B. Boudart, C. Gaquière, D. Thèron, Y. Crosnier, F. Huet, and M. A. Poisson, Electron. Lett. ELLEAK 35, 1356 (1999).
5. S. C. Binari, W. Kruppa, H. B. Dietrich, G. Kelner, A. E. Wickenden, and J. A. Freitas, Jr., Solid-State Electron. SSELA5 41, 1549 (1997).
6. T. H. Ning, C. M. Osburn, and N. H. Yu, J. Electron. Mater. JECMA5 6, 65 (1977)
7. L. Forbes, E. Sun, R. Alders, and J. Moll, IEEE Trans. Electron Devices IETDAI ED-26, 1816 (1979).
8. A. Kastalsky and R. A. Kiehl, IEEE Trans. Electron Devices IETDAI ED-33, 414 (1986)
9. R. Fisher, T. J. Drummond, J. Klem, W. Kopp, T. S. Henderson, D. Perrachione, and J. Morkoç, IEEE Trans. Electron Devices ED-31, 1028 (1984).
10. M. A. Khan, M. S. Shur, Q. C. Chen, and J. N. Kuznia, Electron. Lett. ELLEAK 30, 2175 (1994).
11. P. B. Klein, J. A. Freitas, Jr., S. C. Binari, and A. E. Wickenden, Appl. Phys. Lett. APPLAB 75, 4016 (1999).
12. R. Fisher, T. J. Drummond, W. Kopp, H. Morkoç, K. Lee, and M. Shur, Electron. Lett. ELLEAK 19, 789 (1983).
13. J. C. Inkson, J. Phys. C JPSOAW 14, 1093 (1981).
14. D. V. Lang, R. A. Logan, and M. Jaros, Phys. Rev. B PRBMDO 19, 1015 (1979)
15. P. M. Mooney, G. A. Northrup, T. N. Morgan, and H. G. Grimmeiss, Phys. Rev. B 37, 8298 (1988).
16. M. T. Hirsch, J. A. Wolk, W. Walukiewicz, and E. E. Haller, Appl. Phys. Lett. APPLAB 71, 1098 (1997).
17. C. V. Reddy, K. Balakrishnan, H. Okumura, and S. Yoshida, Appl. Phys. Lett. APPLAB 73, 244 (1998).
18. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), 77.
19. A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967), 159.
20. K. Matsubara and T. Takagi, Jpn. J. Appl. Phys., Part 1 JAPNDE 22, 511 (1982).
21. A. S. Barker and M. Ilegems, Phys. Rev. B PLRBAQ 7, 743 (1973).
22. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlob, and M. Burns, J. Appl. Phys. JAPIAU 76, 1363 (1994).
23. G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, S.-H. Wei, M. A. Khan, and C. J. Sun, Appl. Phys. Lett. APPLAB 68, 2784 (1996).
24. D. C. Look, D. C. Reynolds, W. Kim, Ö. Aktas, A. Botchkarev, A. Salvador, and H. Morkoç, J. Appl. Phys. JAPIAU 80, 2960 (1996)
25. D. C. Look, D. C. Reynolds, R. L. Jones, W. Kim, Ö. Aktas, A. Botchkarev, A. Salvador, and H. Morkoç, Mater. Sci. Eng., B MSBTEK 44, 423 (1997).
26. D. C. Look, Z.-Q. Fang, W. Kim, Ö. Aktas, A. Botchkarev, A. Salvador, and H. Morkoç, Appl. Phys. Lett. APPLAB 68, 3775 (1996).
27. Z.-Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, and H. Morkoç, Appl. Phys. Lett. APPLAB 72, 2277 (1998)
28. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake, J. Appl. Phys. JAPIAU 76, 304 (1994).
29. A. Y. Polyakov, N. B. Smirnov, A. S. Usikov, A. V. Govorkov, and B. V. Pushniy, Solid-State Electron. SSELA5 42, 1959 (1998).
30. X. Z. Dang, C. D. Wajng, E. T. Yu, K. S. Boutros, and J. M. Redwing, Appl. Phys. Lett. APPLAB 72, 2745 (1998).
31. J. C. M. Hwang, Solid-State Electron. SSELA5 43, 1325 (1999).
32. S. C. Binari, K. Ikossi-Anastasiou, W. Kruppa, H. B. Dietrich, G. Kelner, R. L. Henry, D. D. Koleske, and A. E. Wickenden, Mater. Res. Soc. Symp. Proc. MRSPDH 572, 541 (1999).
33. S. C. Binari, K. Ikossi-Anastasiou, J. A. Roussos, D. Park, D. D. Koleske, A. E. Wickenden, and R. L. Henry, Proceedings, 2000 International Conference on GaAs Manufacturing Technology (in press).
34. K. Leung, A. F. Wright, and E. B. Stechel, Appl. Phys. Lett. APPLAB 74, 2495 (1999).