Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 341-346

  Koide, Yasuo ^a   Maeda, T ^a   Kawakami, T ^a   Fujita, S ^a   Uemura, T ^b   Shibata, N ^b   Murakami, Masanori ^a  

^a KYOTO UNIVERSITY   (Japan)

^b Toyoda Gosei Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRIC CONDUCTIVITY OF SOLIDS; NITRIDES; NITROGEN; OHMIC CONTACTS; OXYGEN; SEMICONDUCTOR METAL BOUNDARIES;

GALLIUM NITRIDE; SPECIFIC CONTACT RESISTANCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032649247     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0037-7     Document Type: Article

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