Fabrication and characterization of GaN FETs

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1549-1554

  Binari, S C ^a   Kruppa, W ^a   Dietrich, H B ^a   Kelner, G ^a   Wickenden, A E ^a   Freitas Jr , J A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

SEMI INSULATING BUFFER LAYERS;

MESFET DEVICES;

EID: 0031250545     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00103-2     Document Type: Article

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