AIGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)

Electronics Letters

Volumn 33, Issue 9, 1997, Pages 814-815

  Fan, Zhifang ^a   Lu, Changzhi ^a,b   Botchkarev, A E ^a   Tang, H ^a   Salvador, A ^a   Aktas, O ^a   Kim, W ^a   Morkoc H ^a,c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^c AIR FORCE OFFICE OF SCIENTIFIC RESEARCH   (United States)

Author keywords

MODFET; Semiconductor devices

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; FILM GROWTH; HALL EFFECT; HETEROJUNCTIONS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

DRAIN BREAKDOWN VOLTAGE; MODULATION DOPED FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0031116883     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970497     Document Type: Article

References (12)

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