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Volumn 87, Issue 11, 2000, Pages 7892-7895

Bulk noise processes and their correlation to structural imperfections in magnesium-doped p-type GaN grown on sapphire

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EID: 0001350590     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373530     Document Type: Article
Times cited : (22)

References (20)
  • 15
    • 85037489318 scopus 로고    scopus 로고
    • note
    • F. The same process holds for a p-type semiconductor, giving an analogous expression for A stated in the section below Eq. (1).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.