Structural defects due to interface steps and polytypism in III-V semiconducting materials: A case study using highresolution electron microscopy of the 2H-A1N/6H-SiC interface

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 75, Issue 1, 1997, Pages 239-259

  Vermaut, P ^a   Ruterana, P ^a   Nouet, G ^a   Moricoc H ^b,c  

^a UNIVERSITÉ DE CAEN   (France)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040153856     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619708210293     Document Type: Article

References (27)

1. Amelinckx, S., 1979, Dislocations in Solids, Vol. 2, edited by F. R. N. Nabarro (Amsterdam: North-Holland), p. 67.
2. Basu, S. N., Lei, T., and Moustakas, T. D., 1994, J. Mater. Res., 9, 2370.
3. Capaz, R. B., Lim, H., and Johannopoulos, J. D., 1995, Phys. Rev. B, 51, 17755.
4. Drum, C. M. 1965, Phil. Mag. A, 11, 313.
5. Glaiser, R. W., Spargo, A. E. C., and Smith, D. J., 1989, Ultramicroscopy, 27, 117.
6. Hirth, J. P., and Lothe, J., 1982, Theory of Dislocations, second edition (New York: Wiley-Interscience), p. 354.
7. Komninou, Ph., Stoemenos, J., Dimitrakopoulos, G. P., and Karakostas, Th., 1994, J. appl. Phys., 75, 143.
8. Kuznia, J. N., Asif Khan, M., and Olson, D. T., 1993, J. appl. Phys., 73, 4700.
9. Lin, M. E., Strite, S., Agarwal, A., Salvador, A., Zhou, G. L., Teraguchi, N., Rockett, A., and Moroç, H., 1993a, Appl. Phys. Lett., 62, 702.
10. Lin, M. E., Sverdlov, B., Zhou, G. L., and Morkoç, H., 1993b, Appl. Phys. Lett., 62, 3479.
11. More, K. L., Kong, H. S., Glass, J. T., and Davis, R. F., 1990, J. Am. Ceram. Soc., 73,1283.
12. Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., 1994, J. appl. Phys., 76, 1363.
13. Nakamura, S., Mukai, T., and Senoh, M., 1992, J. appl. Phys., 71, 5543.
14. Nath, K. and Anderson, A. B., 1989, Phys. Rev. B, 40, 7916.
15. Pankove, J. I., 1990, Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, Material Research Society Symposium Proceedings, Vol. 162 edited by J. T. Glass, R. Messier and N. Fujimori (Pittsburgh, Pennsylvania: Materials Research Society), p. 515.
16. Pond, R. C., 1989, Dislocations in Solids, Vol. 8, edited by F. R. Nabarro (Amsterdam: North-Holland), p. 4.
17. Pirouz, P., Chorey, C. M., and Powell, J. A., 1987, Appl. Phys. Lett., 50, 221.
18. Pirouz, P., and Yang, J. W., 1993, Ultramicroscopy, 51, 189.
19. Powell, R. C., Lee, N. E., Kim, Y. W., and Greene, J. E., 1992, Appl. Phys. Lett., 60, 2505.
20. Rouvière, J. L., Arlery, M., Bourret, A., Niebuhr, R., and Bachem, K., 1995, Proceedings of the Ninth Conference on Microscopy of Semiconducting Materials, Institute of Physics Conference Series No. 146 (Bristol: Institute of Physics), p. 285.
21. Secco d’aragona, F., and Delavignette, P., 1966, J. Phys., Paris, Suppl. 7-8, 27, c3-121.
22. Sitar, Z., Smith, L. L., and Davis, R. F., 1994, J. Cryst. Growth, 141, 11.
23. Smith, D. J., Chandrasekhar, D., Sverdlov, B., Botchkarev, A., Salvador, A., and Morkoç, H., 1995, Appl. Phys. Lett., 6, 1830.
24. Stadelmann, P. A., 1987, Ultramicroscopy, 21, 131.
25. Sverdlov, B. N., Martin, G. A., Morkoç, H., and Smith, D. J., 1995, Appl. Phys. Lett., 67, 2063.
26. Tanaka, S., Kern, R. S., and Davis, R. F., 1994, Appl. Phys. Lett., 66, 37.
27. Vermaut, P., Ruterana, P., Nouet, G., Salvador, A., Botchkarev, A., Sverdlov, B., and Morkoç, H., 1995, Proceedings of the Ninth Conference on Microscopy of Semiconducting Materials, Institute of Physics Conference Series No. 146 (Bristol: Institute of Physics), p. 289.