|
Volumn 71, Issue 19, 1997, Pages 2794-2796
|
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CARRIER CONCENTRATION;
ELECTRIC CHARGE;
ELECTRIC VARIABLES MEASUREMENT;
ELECTRON ENERGY LEVELS;
HETEROJUNCTIONS;
INTERFACES (MATERIALS);
PIEZOELECTRICITY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
GALLIUM NITRIDE;
PIEZOELECTRICALLY INDUCED POLARIZATION CHARGES;
SHEET CARRIER DENSITY;
TRANSISTOR CHANNEL;
FIELD EFFECT TRANSISTORS;
|
EID: 0031268156
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.120138 Document Type: Article |
Times cited : (338)
|
References (14)
|